BAS28 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 22 July 2010 6 of 12
NXP Semiconductors
BAS28
High-speed double diode
8. Test information
8.1 Quality information
This product has been qualified in accordance
with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
(1) IR
=1mA
Fig 6. Reverse recovery time test circuit and waveforms
Fig 7. Forward recovery voltage test circuit and waveforms
trr
(1)
+
I
F
t
output signal
tr
tp
t
10 %
90 %
VR
input signal
V = VR +
IF ×
RS
RS = 50 Ω
IF
D.U.T.
Ri
= 50
Ω
SAMPLING
OSCILLOSCOPE
mga881
tr
t
tp
10 %
90 %
I
input signal
RS
= 50
Ω
I
Ri
= 50
Ω
OSCILLOSCOPE
1 kΩ
450 Ω
D.U.T.
mga882
VFR
t
output signal
V
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